Record 7 of 19 in INSPEC 1985-1989 TI: Inelastic scattering of slow electrons leading to excitation of excitons in layer semiconductors AU: Zinets-OS; Strel'niker-YaM SO: Soviet-Physics --Solid-State. vol.30, no.1; Jan. 1988; p.169-70 Translated from: Fizika-Tverdogo-Tela. vol.30, no.1; Jan. 1988; p.294-6. PY: 1988 LA: English AB: The authors investigate inelastic scattering of electrons leading to excitation of excitons in layer crystals (similar to PbI/sub 2/ with the covalent or ionic bonding in the planes of the layers and with the van der Waals interaction between the layers) which can, in conjunction with optical measurements, yield additional information about the energy spectra and dispersion laws of excitons. DE: dispersion-relations; electron-impact; excitons-; semiconductors- AN: 3236978